Author Topic: Underground info  (Read 11993 times)

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Underground info
« on: March 25, 2009, 04:19:39 am »
http://www.zamandayolculuk.com/cetinbal/scalarpotential.htm (good bla bla about scalar stuff )


http://www.unusualresearch.com/scalarbib/scalarbib.htm (plz brg these documents here , I cannot read )

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Re: Underground info
« Reply #1 on: March 25, 2009, 04:32:55 am »
dankie i think you will like this i havent read it yet but its by beardon and the only words that caught my eyes so far on the front page is bi directional em waves. scalar stuff

http://www.scribd.com/doc/7162319/Bearden-Tech-Papers-Utilizing-Scalar-Electromagnetics-to-Tap-Vacuum-Energy

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« Last Edit: March 25, 2009, 14:39:22 pm by Alan »

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Re: Underground info
« Reply #4 on: March 25, 2009, 16:19:11 pm »
stans brother has thrown out many bones for us.. you just got to take alot of his causual talk on the wfc and focus on the little keys he gives us.. like he says the reason they use stainless is because it acts like a transistor. he says that and he mentions the silicon content. which is making it a semiconductor in a since? he mentions the creation process is cold rolled and alot of little triangle in the material?  i was reading up on transistors and i came across this one..

The bipolar junction transistor (BJT) was the first type of transistor to be mass-produced. Bipolar transistors are so named because they conduct by using both majority and minority carriers. The three terminals of the BJT are named emitter, base and collector. Two p-n junctions exist inside a BJT: the base/emitter junction and base/collector junction. "The [BJT] is useful in amplifiers because the currents at the emitter and collector are controllable by the relatively small base current."[9] In an NPN transistor operating in the active region, the emitter-base junction is forward biased, and electrons are injected into the base region. Because the base is narrow, most of these electrons will diffuse into the reverse-biased base-collector junction and be swept into the collector; perhaps one-hundredth of the electrons will recombine in the base, which is the dominant mechanism in the base current. By controlling the number of electrons that can leave the base, the number of electrons entering the collector can be controlled.[9]

quote
"conduct by using both majority and minority carriers"  i think this would be what im speaking of.. holes build up on one side while electrons on the other

"There are two recognized types of charge carriers in semiconductors. One of them is electrons, which carry negative electric charge. It addition, it is convenient to treat the traveling vacancies in the valence-band electron population (holes) as the second type of charge carriers, which carry the positive charge."

THE WORD TRANSISTOR IS A CONTRACTION OF “CURRENT-TRANSFERRING RESIStor

"Bipolar transistors, like diodes, can be made from various semiconductor substances.
Silicon is probably the most common material used."

"Bipolar transistors have two P-N junctions connected together. This is done in either
of two ways: a P-type layer sandwiched between two N-type layers, or an N type
layer between two P-type layers."  theres also a I-type i explain that further down the post.

i think the static voltage that is built up in the copper chokes maintain your static potenitals in the exciters that being one side positve with its scalar wave and the other side negative with its counter scalar wave..  then with how my schematic shows the stainless positve hooked to the positve side of the primarys magnetic induction... it is using the positive 49a-49n pulse to gate?

"Zero bias
Suppose that the base isn’t connected to anything, or is at the same potential as the
emitter. This is zero base bias, sometimes simply called zero bias. How much current
will flow through the transistor? What will the milliammeter (mA) show?
The answer is that there will be no current. The meter will register zero.
Recall the discussion of diode behavior from the previous chapter. No current flows
through a P-N junction unless the forward bias is at least equal to the forward breakover
voltage. (For silicon, this is about 0.6 V.) But here, the forward bias is zero. Therefore,
the emitter-base current, often called simply base current and denoted IB, is zero, and
the emitter-base junction does not conduct. This prevents any current from flowing between
the emitter and collector, unless some signal is injected at the base to change the
situation. This signal would have to be of positive polarity and would need to be at least
equal to the forward breakover voltage of the junction.


"Reverse bias
Now imagine that another battery is connected to the base at the point marked “control,”
so that EB is negative with respect to the emitter. What will happen? Will current
flow through the transistor?
The answer is no. The addition of this new battery will cause the emitter-base
(E-B) junction to be reverse-biased. It is assumed that this new battery is not of such
a high voltage that avalanche breakdown takes place at the junction.
A signal might be injected to overcome the reverse-bias battery and the forward
breakover voltage of the E-B junction, but such a signal would have to be of a high, positive
voltage."

                                                  how do they make p and n type semiconductors???
                                     what about the I type semiconductor?? have you heard of that one???
A P-type semiconductor (P for Positive) is obtained by carrying out a process of doping, that is adding a certain type of atoms to the semiconductor in order to increase the number of free charge carriers (in this case positive).

An N-type semiconductor (N for Negative) is obtained by carrying out a process of doping, that is, by adding an impurity of valence-five elements to a valence-four semiconductor in order to increase the number of free charge carriers (in this case negative).

An intrinsic semiconductor, also called an undoped semiconductor or i-type semiconductor, is a pure semiconductor without any significant dopant species present. The number of charge carriers is therefore determined by the properties of the material itself instead of the amount of impurities. In intrinsic semiconductors the number of excited electrons and the number of holes are equal: n = p.

the key words n=p     negative = positve   
so where im trying to go with this is when the plate material is  put under a certain type of a electrical stress( extra holes/ or overpoppulated electrons).. being a bidirectional flow pulse, created by stans sync pulse circuit.... the system can electromechanicaly dope the plates itself..

 for every action there is an equal and opposite reaction..  its the other half of the equation thats been left out of electric.. the opposite reaction that is happening evenly with emf  the even exchange rate happening..  with no oscilation! understand oscillation is making both forces have to switch direction constantly in ac. the sync pulse does nothin like that . it keeps pushing holes one way and electrons the other.. its like knowing how to make ether work like hydraulics.. the alternator is like a electohydraulic pump the chokes are like your hydraulic cylinders.. they hold potential???

                                            a little bit about nickel  l http://en.wikipedia.org/wiki/Nickel

"The most common oxidation state of nickel is +2 with several Ni complexes known. It is also thought that a +6 oxidation state may exist, however, this has not been demonstrated conclusively. The unit cell of nickel is a face centered cube with a lattice parameter of 0.352 nm giving a radius of the atom of 0.125 nm"

when they speak of oxidation state they are speaking of positve potential state of the material and It is also thought that a +6 oxidation state may exist, however, this has not been demonstrated conclusively


references
http://en.wikipedia.org/wiki/Minority_carriers
http://en.wikipedia.org/wiki/Transistor#Transistor_as_a_switch
http://en.wikipedia.org/wiki/I-type_semiconductor


outlawstc

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Re: Underground info
« Reply #5 on: March 25, 2009, 23:11:20 pm »
The conductivity of intrinsic semiconductors can be due to crystal defects or to thermal excitation. In an intrinsic semiconductor the number of electrons in the conduction band is equal to the number of holes in the valence band.


                                                                           crystal defects

Crystalline solids have a very regular atomic structure: that is, the local positions of atoms with respect to each other are repeated at the atomic scale. These arrangements are called crystal structures, and their study is called crystallography. However, most crystalline materials are not perfect: the regular pattern of atomic arrangement is interrupted by crystal defects. [1] [2] [3] [4]. The various types of defects are enumerated here.
# 1 Point defects
# 2 Line defects
# 3 Planar defects
# 4 Bulk defects
Also amorphous solids may contain defects. These are naturally somewhat hard to define, but sometimes their nature can be quite easily understood. For instance, in ideally bonded amorphous silica all Si atoms have 4 bonds to O atoms and all O atoms have 2 bonds to Si atom. Thus e.g. an O atom with only one Si bond (a dangling bond) can be considered a defect in silica. [7]
http://en.wikipedia.org/wiki/Crystal_defects

An amorphous solid is a solid in which there is no long-range order of the positions of the atoms. (Solids in which there is long-range atomic order are called crystalline solids or morphous). Most classes of solid materials can be found or prepared in an amorphous form. For instance, common window glass is an amorphous solid, many polymers (such as polystyrene) are amorphous, and even foods such as cotton candy are amorphous solids.
http://en.wikipedia.org/wiki/Amorphous

                                                       Photon polarization
Photon polarization is the quantum mechanical description of the classical polarized sinusoidal plane electromagnetic wave. Individual photons are completely polarized. Their polarization state can be elliptical, circular, or linear.         http://en.wikipedia.org/wiki/Photon_polarization


                                                        The piezoresistive effect
 describes the changing electrical resistance of a material due to applied mechanical stress. The piezoresistive effect differs from the piezoelectric effect. In contrast to the piezoelectric effect, the piezoresistive effect only causes a change in resistance; it does not produce an electric potential.

                                                         Piezoresistive effect in silicon

The resistance of silicon changes not only due to the stress dependent change of geometry, but also due to the stress dependent resistivity of the material. This results in gauge factors two orders of magnitudes larger than those observed in metals (Smith 1954). The resistance of n-conducting silicon mainly changes due to a shift of the three different conducting valley pairs. The shifting causes a redistribution of the carriers between valleys with different mobilities. This results in varying mobilities dependent on the direction of current flow. A minor effect is due to the effective mass change related to changing shapes of the valleys. In p-conducting silicon the phenomena are more complex and also result in mass changes and hole transfer.
http://en.wikipedia.org/wiki/Piezoresistive_effect



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Re: Underground info
« Reply #6 on: March 26, 2009, 00:02:17 am »

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Re: Underground info
« Reply #7 on: March 26, 2009, 00:23:11 am »
awesome video, I always enjoy these, thanks for posting it