SCR nano pulse

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$ 1 5.0000000000000004e-8 16.81741416518454 64 5 43
l 144 80 144 176 0 0.005 0.29581997338180416
v 304 352 304 288 0 0 40 30 0 0 0.5
177 144 176 176 272 0 4004.5529457162347 4012.2193805797333 0.01 0.4002 50
f 96 320 144 320 0 1.5
g 144 336 144 352 0
g 304 352 304 368 0
R 96 320 64 320 0 2 5000 5 5 0 0.5
p 112 176 112 272 0
w 112 176 144 176 0
w 112 272 144 272 0
r 240 256 304 256 0 500
d 304 80 176 80 1 0.805904783
w 176 80 144 80 0
r 304 256 304 288 0 1
d 144 336 144 304 1 0.805904783
p 176 256 176 176 0
w 176 176 144 176 0
r 112 176 64 176 0 10000
c 64 176 64 272 0 2e-12 2232.5958032219255
r 176 176 208 176 0 10000
c 208 176 240 176 0 1e-12 2866.092352597288
w 304 80 304 256 0
w 64 272 112 272 0
w 144 272 144 304 0
w 176 256 240 256 0
w 240 176 240 256 0
c 208 288 240 288 0 1e-9 -16.198726361043583
r 176 288 208 288 0 1000
w 240 256 240 288 0
w 144 272 176 288 0
x 230 110 260 113 0 24 D1
x 255 237 285 240 0 24 R1
x 157 112 183 115 0 24 L1
x 167 225 217 228 0 24 SCR
x 155 337 226 340 0 24 Mosfet
x 336 321 373 324 0 24 30v
x 5 349 39 352 0 14 Drain
x 242 418 272 421 0 24 R1
x 10 360 39 363 0 14 SCR
x 3 379 38 382 0 14 Amps
x 13 392 44 395 0 14 Gate
x 434 143 486 146 0 24 hello
x 434 143 486 146 0 24 hello
x 373 214 545 217 0 24 Sebosfato SCR
x 350 269 627 272 0 24 High Voltage Nano Pulse
o 3 64 0 34 320 0.2 0 -1
o 7 64 0 34 20480 0.00009765625 0 -1
o 1 64 0 33 18.707220957835556 0.37414441915671115 0 -1
o 6 64 0 35 10 0.00009765625 0 -1
o 10 64 0 291 160 0.4 1 -1

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the main problem with this circuit is the peak power dissipation on the scr

the r1 also will get some hot...

the pulse limits depends on the size of the coil and the peak ratings of the scr...

The sith is only a device that wont need the R1 to turn on...makes things easier...

anyway is a good idea to use many scrs in series to get the highvoltage and peak power ratings... but this need another aproach for trigering...

here its transforming 30v 300ma to 11kv on the primary side.. so a 1 to 5 ratio would certainly give 55kv output

i´m talking about horvaths claims and this patent on the attachment..

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R1  ?

by using a fly back transformer , winding ratio goes out the window .              the HV depends on stored energy discharged .
the mosfet and SCR need big heat sinks anyway , they get hot .
Patent  says 1st semiconductor = SI transistor or SI thyristor or GTO ......
2nd semiconductor = MOSFET

patent assignee : NGK ltd , nagoya (JP) , they have dropped money , time and resources on this device

I wonder if diode 36 could be a different trigger device used
the patent drawings dont give anything away , they are very basic representation

 

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In the patent i think i read they say that common scr could be used too... this first post is a simulation on falstad simulator showing how a common scr could be used for such operation...

the r1 is used to allow the scr to triger automatically when pulse on like a static induction tyristor would do...

i think that making a multilayer pulse transformer with a layer for trigering each tyristor may be  the best way to go for it.. (having many in series like sugested in the patent) 

this way the capacitance between the windings will be balanced.. so we can put many scrs in series... each with some tvs in parallel with it to make it have a limit of voltage so it dont blow.

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$ 1 5e-9 30.13683688681967 53 5 43
l 144 32 144 128 0 0.0005 0.14690678017457276
v 304 304 304 240 0 0 40 30 0 0 0.5
f 96 272 144 272 0 1.5
g 144 288 144 304 0
g 304 304 304 320 0
R 96 272 64 272 0 2 5000 10 10 0 0.5
p 112 128 112 224 0
w 112 128 144 128 0
w 112 224 144 224 0
d 304 32 176 32 1 0.805904783
w 176 32 144 32 0
r 304 208 304 240 0 0.1
d 144 288 144 256 1 0.805904783
p 176 32 176 128 0
w 176 128 144 128 0
r 112 128 64 128 0 500
w 304 32 304 208 0
w 64 224 112 224 0
w 144 224 144 256 0
x 230 62 260 65 0 24 D1
x 74 113 104 116 0 24 R1
x 157 64 183 67 0 24 L1
x 167 177 344 180 0 24 semiconductor 1
x 155 289 226 292 0 24 Mosfet
x 336 273 373 276 0 24 30v
x 5 301 39 304 0 14 Drain
x 242 370 272 373 0 24 R1
x 10 312 39 315 0 14 SCR
x 3 331 38 334 0 14 Amps
x 13 344 44 347 0 14 Gate
x 434 95 486 98 0 24 hello
x 434 95 486 98 0 24 hello
x 373 166 560 169 0 24 Sebosfato mosfet
x 350 221 620 224 0 24 High Voltage Nano Pulse
f 96 176 144 176 0 1.5
w 144 160 144 128 0
w 144 192 144 224 0
z 64 224 96 176 1 0.805904783 15
w 64 128 96 176 0
z 176 224 176 128 1 0.805904783 1000
w 176 224 144 224 0
w 64 128 64 32 0
w 64 32 144 32 0
c 64 32 144 128 0 1e-9 14.773775991613666
o 2 64 0 34 20 3.2 0 -1
o 6 64 0 34 640 0.00009765625 0 -1
o 1 64 0 33 18.707220957835556 2.993155353253689 0 -1
o 5 64 0 35 20 0.00009765625 0 -1
o 39 64 1 35 0.00244140625 0.00009765625 0 -1
o 15 64 1 35 640 0.00009765625 0 -1
o 37 64 0 290 10 1.6 0 -1





As can be see here it can be done with mosfets too.. but is harder and takes tvs´s too... here the load resistor become R1 and it is what commands the gate too....

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$ 1 5.0000000000000004e-8 16.81741416518454 69 5 43
l 144 32 144 128 0 0.002 -0.0009569599713791757
v 304 304 304 240 0 0 40 300 0 0 0.5
177 144 128 176 224 0 10.349688543594368 10.349418498806756 0.005 0.4002 30
f 96 272 144 272 0 1.5
g 144 288 144 304 0
g 304 304 304 320 0
R 96 272 64 272 0 2 5000 10 10 0 0.5
p 112 128 112 224 0
w 112 128 144 128 0
w 112 224 144 224 0
r 240 208 304 208 0 60000
w 176 32 144 32 0
r 304 208 304 240 0 1
d 144 288 144 256 1 0.805904783
r 112 128 112 32 0 5000
w 304 32 304 208 2
w 144 224 144 256 0
w 176 208 240 208 0
x 255 189 285 192 0 24 R1
x 157 64 183 67 0 24 L1
x 167 177 217 180 0 24 SCR
x 155 289 226 292 0 24 Mosfet
x 5 301 39 304 0 14 Drain
x 180 399 210 402 0 24 R1
x 10 312 39 315 0 14 SCR
x 3 331 38 334 0 14 Amps
x 13 344 44 347 0 14 Gate
x 434 95 486 98 0 24 hello
x 434 95 486 98 0 24 hello
x 373 166 538 169 0 24 Sebosfato SCR
x 350 221 620 224 0 24 High Voltage Nano Pulse
w 112 32 144 32 0
d 80 224 80 128 1 0.805904783
w 80 128 112 128 0
w 80 224 112 224 0
w 176 32 304 32 0
x 26 40 79 43 0 24 Load
x 281 403 333 406 0 24 hello
c 80 128 80 32 0 1e-9 10.39946158183659
w 112 32 80 32 0
w 688 224 688 256 0
d 688 288 688 256 1 0.805904783
g 688 288 688 304 0
f 640 272 688 272 0 1.5
w 176 288 176 320 0
d 176 352 176 320 1 0.805904783
g 176 352 176 368 0
f 128 336 176 336 0 1.5
w 144 256 176 288 0
w 128 336 96 272 0
w 224 336 224 368 0
d 224 400 224 368 1 0.805904783
g 224 400 224 416 0
f 176 384 224 384 0 1.5
w 176 384 128 336 0
w 224 336 176 320 0
o 3 64 0 34 1280 1.6 0 -1
o 7 64 0 34 10240 0.00009765625 0 -1
o 1 64 0 33 299.3155353253689 11.972621413014757 0 -1
o 6 64 0 35 20 0.00009765625 0 -1
o 10 64 1 35 5 0.00009765625 1 -1
o 14 64 1 35 20480 0.00009765625 2 -1
o 14 64 0 290 10240 1.6 3 -1

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$ 1 5.0000000000000004e-8 16.817414165184545 64 5 43
l 144 80 144 176 0 0.005 1.753615684098956e-10
v 304 352 304 288 0 0 40 30 0 0 0.5
177 144 176 176 272 0 0.000043358142022498214 0.00001138172555315009 0.01 0.4002 50
f 96 320 144 320 0 1.5 0.02
g 144 336 144 352 0
g 304 352 304 368 0
R 32 320 0 320 0 2 5000 10 10 0 0.5
p 112 176 112 272 0 0
w 112 176 144 176 0
w 112 272 144 272 0
r 240 256 304 256 0 100
d 304 80 176 80 1 0.805904783
w 176 80 144 80 0
r 304 256 304 288 0 0.01
d 144 336 144 304 1 0.805904783
p 176 256 176 176 0 0
w 176 176 144 176 0
r 176 176 240 176 0 500000
w 304 80 304 256 0
w 64 272 112 272 0
w 144 272 144 304 0
w 176 256 240 256 0
w 240 176 240 256 0
r 176 288 240 288 0 10000
w 240 256 240 288 0
w 144 272 176 288 0
x 230 110 260 113 4 24 D1
x 255 237 285 240 4 24 R1
x 157 112 183 115 4 24 L1
x 167 225 217 228 4 24 SCR
x 155 337 227 340 4 24 Mosfet
x 336 321 374 324 4 24 30v
x 5 349 38 352 4 14 Drain
x 242 418 272 421 4 24 R1
x 10 360 39 363 4 14 SCR
x 3 379 38 382 4 14 Amps
x 13 392 43 395 4 14 Gate
x 434 143 484 146 4 24 hello
x 434 143 484 146 4 24 hello
x 373 214 538 217 4 24 Sebosfato\sSCR
x 350 269 616 272 4 24 High\sVoltage\sNano\sPulse
z 176 368 176 288 1 0.805904783 800
g 176 368 176 400 0
r 32 320 96 320 0 10
z 64 272 64 176 1 0.805904783 20000
w 64 176 112 176 0
o 3 64 0 4098 80 0.2 0 2 3 3
o 7 64 0 4098 20480 0.00009765625 0 1
o 1 64 0 4097 18.707220957835556 0.37414441915671115 0 2 1 3
 

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$ 1 5.0000000000000004e-8 16.817414165184545 69 5 43
l 144 32 144 128 0 0.002 -0.5173269855539349
v 304 304 304 240 0 0 40 30 0 0 0.5
177 144 128 176 224 0 -0.7718106163075763 -7.693451783473629 0.005 0.4002 30
f 96 272 144 272 0 1.5 0.02
g 144 288 144 304 0
g 304 304 304 320 0
R 96 272 64 272 0 2 5000 10 10 0 0.5
p 112 128 112 224 0 0
w 112 128 144 128 0
w 112 224 144 224 0
r 240 208 304 208 0 100
w 176 32 144 32 0
r 304 208 304 240 0 0.01
d 144 288 144 256 1 0.805904783
w 304 32 304 208 2
w 144 224 144 256 0
w 176 208 240 208 0
x 255 189 285 192 4 24 R1
x 157 64 183 67 4 24 L1
x 167 177 217 180 4 24 SCR
x 155 289 227 292 4 24 Mosfet
x 5 301 38 304 4 14 Drain
x 180 399 210 402 4 24 R1
x 10 312 39 315 4 14 SCR
x 3 331 38 334 4 14 Amps
x 13 344 43 347 4 14 Gate
x 434 95 484 98 4 24 hello
x 434 95 484 98 4 24 hello
x 373 166 538 169 4 24 Sebosfato\sSCR
x 350 221 616 224 4 24 High\sVoltage\sNano\sPulse
w 112 32 144 32 0
d 80 224 80 128 1 0.805904783
w 80 128 112 128 0
w 80 224 112 224 0
w 176 32 304 32 0
x 26 40 79 43 4 24 Load
x 281 403 331 406 4 24 hello
w 112 32 80 32 0
w 176 288 176 320 0
d 176 352 176 320 1 0.805904783
g 176 352 176 368 0
f 128 336 176 336 0 1.5 0.02
w 144 256 176 288 0
w 128 336 96 272 0
w 224 336 224 368 0
d 224 400 224 368 1 0.805904783
g 224 400 224 416 0
f 176 384 224 384 0 1.5 0.02
w 176 384 128 336 0
w 224 336 176 320 0
r 144 224 240 224 0 1000
w 240 224 240 208 0
o 3 64 0 4098 40 1.6 0 2 3 3
o 7 64 0 4098 81920 0.00009765625 0 1
o 1 64 0 4097 299.3155353253689 0.37414441915671115 0 2 1 3
o 6 64 0 4099 20 0.00009765625 0 2 6 3
o 10 64 1 4099 5 0.00009765625 1 1 40


higher current sim (the transistors in the simulation wont let much current flow)